Solid source molecular beam epitaxy of low threshold strained layer 1.3 µm InAsP/GaInAsP lasers

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Solid source molecular beam epitaxy of low threshold strained layer 1.3 µm InAsP/GaInAsP lasers

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A threshold current density of 270 A/cm2 has been achieved for 2 mm long broad area lasers grown by solid source molecular beam epitaxy. These are the lowest reported threshold current density 1.3 µm lasers by any type of MBE growth technique.

Inspec keywords: quantum well lasers; III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; indium compounds

Other keywords: solid source molecular beam epitaxy; 1.3 micrometre; broad area lasers; threshold current density; InAsP-GaInAsP; MQW lasers; 2 mm; strained layer lasers

Subjects: Vacuum deposition; Design of specific laser systems; Epitaxial growth; Semiconductor lasers; Lasing action in semiconductors

References

    1. 1)
      • A. Adams . Band-structure engineering for low-threshold high-efficiency semiconductorlasers. Electron. Lett. , 249 - 250
    2. 2)
      • G.W. Wicks , M.W. Koch , J.A. Varrano , F.G. Johnson , C.R. Wie , H.M. Kim , P. Colombo . Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5Pand Al0.5In0.5P by molecular beam epitaxy. J. Vac. Sci. Technol. , 342 - 344
    3. 3)
      • H. Sugiura , M. Mitsuhara , H. Oohashi , T. Hirono , K. Nakashima . Metalorganic molecular beam epitaxy of strained InAsP/InGaAsP multi-quantum-wellsfor 1.3 µm wavelength laser diodes. J. Crystal Growth , 1 - 7
    4. 4)
      • D.L. Miller , S.S. Bose , G.J. Sullivan . Design and operation of a valved solid-source As2 oven for molecularbeam epitaxy. J. Vac. Sci. Technol. , 311 - 313
    5. 5)
      • P. Thiagarajan , A.A. Bernussi , H. Temkin , G.Y. Robinson . Growthof 1.3 µm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy. Appl. Phys. Lett. , 3676 - 3678
    6. 6)
      • M. Yamamoto , N. Yamamoto , J. Nakano . MOVPE growth of strained InAsP/InGaAsP quantum well structures for lowthreshold 1.3 µm lasers. IEEE J. Quantum Electron. , 554 - 561
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