Silicon carbide on insulator formation using the Smart Cut process

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© IEE
Published 28/07/2012

Abstract

The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycristalline SiC and on silicon substrates.

Inspec keywords: integrated circuit technology; silicon compounds; ion implantation; wafer bonding; polishing; annealing

Other keywords: Si substrate; SiC on insulator formation; Smart Cut process; polycrystalline SiC substrate; SiCOI structures; Si; SiC

Subjects: Semiconductor integrated circuits; Semiconductor technology

References

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      • Ivanov, P.A., Chelnokov, V.E.: `Semiconductor silicon-carbide-technology and devices: A review', Semiconductors, 1995, 29, (11), p. 1003-1013
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