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Silicon on insulator material technology

Silicon on insulator material technology

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A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.

References

    1. 1)
      • Maszara, W.P.: `SOI by wafer bonding: A review', Proc. Fourth Int. Symp. Silicon on Insulator Technology andDevices, 1990, 90-6, The Electro Chemical Society Inc., p. 199–212.
    2. 2)
      • Mumola, P.M., Gardopee, G.J., Clapis, P.J., Zarowin, C.B., Bolliger, L.D., Ledger, A.M.: `Plasma thinned SOI bonded wafers', Proc. 1992 IEEE Int. SOI Conf., October 1992, Florida, p. 152–153.
    3. 3)
      • M. Kaminsky . Plasma contamination and wall erosion in thermonuclear reactors. IEEE Trans. , 4 , 208 - 217
    4. 4)
      • R.G. Saint Jacques . La formation des cloques. Nucl. Instrum. Methods , 333 - 343
    5. 5)
      • W.J. Choyke , R.B. Irwin , J.N. McGruer , J.R. Townsend , N.J. Doyle , B.O. Hall , J.A. Spitznagell , S. Wood . Mechanical response of single crystal Si to very high fluence H+implantation. Nucl. Instrum. Methods , 407 - 412
    6. 6)
      • W.K. Chu , R.H. Kastl , R.F. Lever , S. Mader , B.J. Masters , Chernow , Borders , Brice . (1977) Radiation damage of 50–250 keV hydrogen ions in silicon, Ion implantation in semiconductors.
    7. 7)
      • W.K. Chu , R.H. Kastl , R.F. Lever , S. Mader , B.J. Masters . Distribution of irradiation damage in silicon bombarded with hydrogen. Phys. Rev. B , 9 , 3851 - 3859
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