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Silicon on insulator material technology

Silicon on insulator material technology

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A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.

References

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      • Maszara, W.P.: `SOI by wafer bonding: A review', Proc. Fourth Int. Symp. Silicon on Insulator Technology andDevices, 1990, 90-6, The Electro Chemical Society Inc., p. 199–212.
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      • W.J. Choyke , R.B. Irwin , J.N. McGruer , J.R. Townsend , N.J. Doyle , B.O. Hall , J.A. Spitznagell , S. Wood . Mechanical response of single crystal Si to very high fluence H+implantation. Nucl. Instrum. Methods , 407 - 412
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