@ARTICLE{ iet:/content/journals/10.1049/el_19950805, author = {M. Bruel}, keywords = {silicon on insulator material technology;microslicing;wafer bonding;Si:H;heat treatment;hydrogen implantation;electrical characterisation;}, ISSN = {0013-5194}, language = {English}, abstract = {A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.}, title = {Silicon on insulator material technology}, journal = {Electronics Letters}, issue = {14}, volume = {31}, year = {1995}, month = {July}, pages = {1201-1202(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© IEE}, url = {https://digital-library.theiet.org/;jsessionid=4ngrpm620b417.x-iet-live-01content/journals/10.1049/el_19950805} }