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Study of stress-induced leakage current in scaled SiO2

Study of stress-induced leakage current in scaled SiO2

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The stressed-induced leakage current (SILC) in ultrathin SiO2 with thicknesses ranging from 40 to 70 Å is studied. Results indicate that the trap creation mechanism responsible for SILC is hydrogen-related. Reduced SILC can be achieved in scaled SiO2 if the stress electric field is kept below a threshold value that increases with decreasing oxide thickness. Annealing of SiO2 in pure NO ambient is also shown to be an extremely effective approach to realising SILC reduction in ultrathin SiO2.

Inspec keywords: electron traps; leakage currents; annealing; dielectric thin films; silicon compounds

Other keywords: stress-induced leakage current; NO; ultrathin oxide film; scaled SiO2; hydrogen; trap creation; SiO2:H; annealing

Subjects: Annealing processes in semiconductor technology; Dielectric materials and properties; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Electrical conductivity of insulators; Electrical properties of insulators (thin films, low-dimensional and nanoscale structures)

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