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Stable high-power operation of self-aligned stepped substrate (S3) AlGaInP visible laser diode with small beam aspect ratio

Stable high-power operation of self-aligned stepped substrate (S3) AlGaInP visible laser diode with small beam aspect ratio

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The authors have developed a selfaligned stepped substrate (S3) AlGaInP laser diode with a small beam aspect ratio and stable high-temperature high-output-power operation. The laser had the index-guided laser structure, and was fabricated by only one-step MOVPE. The width of the laser waveguide was decreased to enlarge the beam divergence in the horizontal direction. Also, the strained multiquantum-well active layer was modified to reduce the high temperature operation current by introducing GaInAsP well layers. As a result, the laser had a beam aspect ratio of 1.5 and stable 35 mW operation for more than 1000 h at 50°C.

References

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      • C. Anayama , H. Sekiguchi , M. Kondo , H. Sudo , T. Fukushima , A. Furuya , T. Tanahashi . One-step-metalorganic-vapour-phase-epitaxy-grown AlGaInP visible laserusing simultaneous impurity doping. Appl. Phys. Lett. , 1736 - 1738
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      • M. Shono , H. Hamada , S. Honda , R. Hiroyama , K. Yodoshi , T. Yamaguchi . Low-threshold 630-nm-band AlGaInP multiquantum-well laser diodes grownon misoriented substrates. Electron. Lett. , 905 - 906
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      • Anayama, C., Sekiguchi, H., Kondo, M., Domen, K., Kito, Y., Furaya, A., Tanahashi, T.: `Investigation of strained GaInAsP active layer for AlGaInP visible laser', Ext. Abs. 1993 Int. Conf. on Solid State Devices and Materials, 1993, Nippon Convention Center, Makuhari MesseChiba, Japan.
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