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InAsSb light emitting diodes and their applications to infra-red gas sensors

InAsSb light emitting diodes and their applications to infra-red gas sensors

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© The Institution of Electrical Engineers
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In As1−xSbx light emitting diodes were grown on GaAs and Si substrates by molecular beam epitaxy. The devices emit infra-red light with wavelengths between 3 and 5 μm and can be used to fabricate infra-red gas sensors.

Inspec keywords: infrared detectors; indium antimonide; molecular beam epitaxial growth; gas sensors; III-V semiconductors; semiconductor growth; light emitting diodes

Other keywords: infrared light; light emitting diodes; CO2 gas; molecular beam epitaxy; GaAs substrate; LED; infra-red gas sensors; InAsSb-Si; InAsSb-GaAs; Si substrates; 3 to 5 micron; IR sensor

Subjects: Epitaxial growth; Chemical variables measurement; Light emitting diodes; Chemical sensors

References

    1. 1)
      • W. Dobbelaere , J. de Boeck , P. Heremans , G. Borghs , W. Luyten , J. van Landuyt . InAsSb infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy. Appl. Phys. Lett. , 3256 - 3258
    2. 2)
      • H.K. Choi , S.J. Eglash . High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode laser emitting at 2.1 μm with low threshold current density. Appl. Phys. Lett. , 1154 - 1156
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