High speed performance of 1.5 μm compressive-strained multiquantum-well gain-coupled distributed-feedback lasers

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High speed performance of 1.5 μm compressive-strained multiquantum-well gain-coupled distributed-feedback lasers

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1.5 μm compressive-strained multiquantum-well gain-coupled distributed-feedback lasers have been fabricated on semi-insulating InP substrates with very low parasitic capacitance for studying the laser dynamic characteristics. A maximum 3 dB bandwidth of 12.8 GHz under small signal modulation, a 20 dB down chirping width of 0.33 nm under 5 Gbit/s NRZ pseudorandom modulation, and a low chirping short pulse of 20 ps under gain switching are obtained.

Inspec keywords: optical modulation; semiconductor lasers; distributed feedback lasers; laser transitions

Other keywords: III-V semiconductor; laser dynamic characteristics; pseudorandom modulation; 1.5 micron; compressive-strained multiquantum-well gain-coupled distributed-feedback lasers; gain switching; InP substrates; semiconductor laser; 12.8 GHz

Subjects: Laser beam modulation, pulsing and switching; mode locking and tuning; Design of specific laser systems; Semiconductor lasers; Lasing action in semiconductors

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