Very broadband distributed amplifier to 75 GHz

Access Full Text

Very broadband distributed amplifier to 75 GHz

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Distributed amplifiers were fabricated successfully with a gain of 8 dB ± 1 dB in the frequency range 5–75 GHz measured on-wafer. The associated input and output matching is better than − 10 dB. To the authors' knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.

Inspec keywords: microwave amplifiers; III-V semiconductors; gallium arsenide; wideband amplifiers; MMIC; high electron mobility transistors

Other keywords: GaAs; broadband distributed amplifier; output matching; coplanar waveguide technology; 5 to 75 GHz; MODFET; 7 to 9 dB

Subjects: Other field effect devices; Amplifiers; Semiconductor integrated circuits; Microwave integrated circuits

References

    1. 1)
      • Perdomo, J., Hughes, B., Kondoh, H., Studebaker, L., Zhou, G., Taylor, T., Li, C., Ma, T.: `A monolithic 1 to 50 GHz distributed amplifier with 20 dBm output power', IEEE GaAs IC Symp. Technical Dig., 1992, p. 203–206.
    2. 2)
      • Yuen, C., Nishimoto, C., Glenn, M., Webb, C., Bandy, S., Zdasiuk, G.: `High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz', IEEE 1990 Microwave and Millimeter-Wave Monolithic Circuits Symp., p. 23–26.
    3. 3)
      • Wenger, J., Narozny, P., Hruschka, K., Braunstein, J., Dambkes, H.: `Low-noise dual-gate cascode AlGaAs/GaAs- HEMTs', 19th Int. Symp. on GaAs and Related Compounds, 1992, p. 735–740, Inst. Phys. Conf. Ser. No. 129, Chap. 9.
    4. 4)
      • M. Schlechtweg , W. Reinert , P.J. Tasker , R. Bosch , J. Braunstein , A. Hülsmann , K. Köhler . Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models. IEEE Trans. Microwave Theory and Techniques , 12 , 2445 - 2451
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930569
Loading

Related content

content/journals/10.1049/el_19930569
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading