High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers
High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers
- Author(s): T. Namegaya ; A. Kasukawa ; N. Iwai ; T. Kikuta
- DOI: 10.1049/el:19930263
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- Author(s): T. Namegaya 1 ; A. Kasukawa 1 ; N. Iwai 1 ; T. Kikuta 1
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View affiliations
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Affiliations:
1: Yokohama R&D Laboratories, Furukawa Electric Co. Ltd., Yokohama, Japan
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Affiliations:
1: Yokohama R&D Laboratories, Furukawa Electric Co. Ltd., Yokohama, Japan
- Source:
Volume 29, Issue 4,
18 February 1993,
p.
392 – 393
DOI: 10.1049/el:19930263 , Print ISSN 0013-5194, Online ISSN 1350-911X
The well number of 1.3 μm GaInAsP/InP strained-layer GRINSCH quantum well lasers has been experimentally investigated in terms of the temperature dependence of the threshold current. A very high CW operating temperature of 170°C with a threshold current of 46.2 mA was obtained for an HR coated laser with eight wells.
Inspec keywords: gallium compounds; III-V semiconductors; gallium arsenide; indium compounds; gradient index optics; laser transitions; semiconductor lasers
Other keywords:
Subjects: Design of specific laser systems; Lasing action in semiconductors; Semiconductor lasers; Gradient-index (GRIN) devices
References
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