Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

3.0 W blue light generation by frequency doubling of broad area semiconductor amplifier emission

3.0 W blue light generation by frequency doubling of broad area semiconductor amplifier emission

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Broad area GaAlAs amplifier emission is frequency doubled in a single pass through a 2 cm long KNbO3 crystal. A maximum peak power of 3.0 W at 432 nm is achieved with 15.6 W of incident fundamental power and 0.3 μs long pulses, corresponding to a 190% nonlinear conversion efficiency.

Inspec keywords: optical harmonic generation; gallium arsenide; optical pumping; III-V semiconductors; aluminium compounds; laser beam applications; semiconductor lasers

Other keywords: semiconductor amplifier emission; nonlinear optics; semiconductor lasers; KNbO3 crystal; nonlinear conversion efficiency; blue light generation; 19 percent; GaAlAs; second harmonic generation; 432 nm; 15.6 W; 3 W; frequency doubling; 2 cm; SHG

Subjects: Laser beam applications; Optical harmonic generation, frequency conversion, parametric oscillation and amplification; Semiconductor lasers; Laser beam characteristics and interactions; Nonlinear optics and devices; Lasing action in semiconductors; Laser applications

References

    1. 1)
      • Kozlovsky, W.J.: `Frequency-doubled diode lasers', Compact Blue-Green Lasers Topical Meeting, Optical Society of America Technical Digest Series, 20th–21st February 1992, Santa Fe, NM, 6, p. FA2.1–FA2.3.
    2. 2)
      • L. Goldberg , L.E. Busse , D. Mehuys . Blue light generation by frequency doubling of AlGaAs broad area amplifier emission. Appl. Phys. Lett. , 9 , 1037 - 1039
    3. 3)
      • G.D. Boyd , D.A. Kleinman . Parametric interaction of focused Gaussian light beams. J. Appl. Phys. , 8 , 3597 - 3639
    4. 4)
      • L. Goldberg , D. Mehuys . 21W broad area near-diffraction-limited semiconductor amplifier. Appl. Phys. Lett. , 6 , 633 - 635
    5. 5)
      • G.J. Dixon , C.E. Tanner , C.E. Wieman . 432nm source based on efficient second harmonic generation of GaAlAs diode-laser radiation on self-locking external resonant cavity. Opt. Lett. , 14 , 731 - 733
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930050
Loading

Related content

content/journals/10.1049/el_19930050
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address