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Linear and nonlinear intersub-band optical absorption in diffusion-induced AlGaAs/GaAs quantum well at far IR wavelengths

Linear and nonlinear intersub-band optical absorption in diffusion-induced AlGaAs/GaAs quantum well at far IR wavelengths

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© The Institution of Electrical Engineers
Published

The effect of interdiffusion on the intersub-band absorption coefficient of AlGaAs/GaAs single quantum well structures has been analysed, based on the linear and nonlinear contributions from the first and third order susceptibilities, respectively. The results show that interdiffusion may be used to tune the intersub-band absorption over a large wavelength range of tens of micrometres together with a uniform absorption coefficient.

Inspec keywords: gallium arsenide; nonlinear optical susceptibility; semiconductor quantum wells; chemical interdiffusion; infrared detectors; III-V semiconductors; aluminium compounds

Other keywords: AlGaAs-GaAs; intersub-band absorption; first order susceptibilities; third order susceptibilities; interdiffusion; SQW; far IR wavelengths; linear optical absorption; uniform absorption coefficient; nonlinear optical absorption; single quantum well structures

Subjects: Nonlinear optics; Optical properties of nonmetallic thin films; Nonlinear optics and devices; Semiconductor junctions

References

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