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1.57μn InGaAsP/InP surface emitting lasers by angled focus ion beam etching

1.57μn InGaAsP/InP surface emitting lasers by angled focus ion beam etching

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© The Institution of Electrical Engineers
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The characteristics of 1.57μm InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45° beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor hetcrostructures for a variety of integrated optoelectronic devices.

Inspec keywords: gallium arsenide; optical workshop techniques; semiconductor junction lasers; indium compounds; III-V semiconductors; sputter etching; gallium compounds; laser cavity resonators; laser transitions; semiconductor technology

Other keywords: integrated optoelectronic devices; angled focus ion beam etching; InGaAsP-InP; emission spectra; threshold currents; 1.57 micron; semiconductor lasers; FIB etching; folded cavity; 45° beam deflectors; high quality mirrors; surface emitting lasers; in-plan ridged structure; externally integrated beam deflector; semiconductor heterostructures

Subjects: Surface treatment and degradation in semiconductor technology; Surface treatment (semiconductor technology); Laser resonators and cavities; Optical fabrication, surface grinding; Lasing action in semiconductors; Laser resonators and cavities; Semiconductor lasers; Design of specific laser systems

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