Kink-related noise overshoot in SOI n-MOSFETS operating at 4.2 K

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Kink-related noise overshoot in SOI n-MOSFETS operating at 4.2 K

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© The Institution of Electrical Engineers
Published

The low frequency noise behaviour of SOl n-MOSFETs operated at 4.2 K is reported for the first time and compared with room temperature behaviour. It is shown that the noise level increases by a factor of 3–5, and the kink-related noise overshoot becomes much more pronounced on cooling. These results are compared with the noise overshoot observed in bulk devices operating at 4.2 K and a similar explanation for the phenomenon is proposed.

Inspec keywords: electron device noise; insulated gate field effect transistors; cryogenics; semiconductor-insulator boundaries

Other keywords: kink-related noise overshoot; low frequency noise behaviour; SOI n-MOSFETs; n-channel device; LF noise; 4.2 K; NMOSFET

Subjects: Insulated gate field effect transistors

References

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