© The Institution of Electrical Engineers
A GaInAsP/InP surface emitting laser has been demonstrated grown by chemical beam epitaxy (CBE) for the first time. The device has a 30μm round-low mesa with a 1.0μm active layer. The threshold current as low as 2.7 mA (455 A/cm2) was obtained under 77 K CW operation (=1.43μm). This is the lowest value of long wavelength SE lasers ever reported. These results show the possibility of realising high performance SE lasers grown by CBE.
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