Multigigahertz varactorless Si bipolar VCO IC

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Multigigahertz varactorless Si bipolar VCO IC

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A high-performance varactorless VCO is introduced, that uses a capacitively-coupled current amplifier as the active device. The test VCO IC realised in a 2 μm Si bipolar process exhibits a maximum centre frequency of 2.5 GHz, a time jitter of 2.5 ps at 2GHz, and temperature coefficient of less than 100 ppm/°C.

Inspec keywords: MMIC; bipolar integrated circuits; variable-frequency oscillators; microwave oscillators

Other keywords: external microstrip line; 2 micron; Si; temperature coefficient; bipolar VCQ IC; capacitively-coupled current amplifier; time jitter; maximum centre frequency; 2 GHz; 2.5 GHz; varactorless VCO

Subjects: Bipolar integrated circuits; Microwave integrated circuits; Oscillators

References

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      • T. Ohira , T. Hiraoka , H. Kato . MMIC 14-GHz VCO and Miller frequency divider for low-noise local oscillators. IEEE Trans. , 7 , 657 - 662
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      • G.D. O'Clock , S. Koch , J. Dehaven . Varactorless VCOs: transistors go it alone. Microwaves & RF , 137 - 142
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      • M. Soyuer , R.G. Meyer . High-frequency phase-locked loops in monolithic bipolar technology. IEEE J. Solid-State Circuits , 787 - 795
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      • C.P. Snapp . Advanced silicon bipolar technology yields usable monolithic microwaves and high speed digital ICs. Microwave J. , 93 - 103
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      • Khanna, A.P.S.: `Fast-settling, low noise Ku band fundamental bipolar VCO', IEEE MTT-S Dig., 1987, p. 579–581.
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      • M. Banu . MOS oscillators with multi-decade tuning range and gigahertz maximum speed. IEEE J. Solid-State Circuits , 6 , 1386 - 1393
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