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Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum well

Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum well

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Results of the effects of an error-function compositional profile, which simulates the effects of disordering, in a strained quantum well structure on the polarisation dependent interband absorption coeflicient are presented. Strain and disordering can be combined in quantum well structures to tailor the absorption edge to desired wavelengths.

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