Narrow spectral linewidth 150mW semiconductor laser with fundamental transverse mode for SHG light source

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Narrow spectral linewidth 150mW semiconductor laser with fundamental transverse mode for SHG light source

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© The Institution of Electrical Engineers
Published

A highly reliable, narrow spectral linewidth, 150mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed, by optimising the structure with a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the facets. Stable, fundamental transverse mode operation was obtained up to 230mW. The spectral linewidth was 5MHz at 150mW. Stable operation under 150mW at 50°C was confirmed for more than 2000 h.

Inspec keywords: frequency stability; laser modes; spectral line breadth; aluminium compounds; gallium arsenide; optical harmonic generation; III-V semiconductors; semiconductor junction lasers

Other keywords: 150 mW; semiconductor laser; narrow spectral linewidth; AlGaAs-GaAs; 860 nm; fundamental transverse mode; 2000 h; 230 mW; SHG light source; current-blocking regions; 50 degC; p-cladding layer; stable operation

Subjects: Lasing action in semiconductors; Semiconductor lasers; Design of specific laser systems; Nonlinear optics and devices; Optical harmonic generation, frequency conversion, parametric oscillation and amplification

References

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      • K. Sasaki , M. Matsumoto , M. Kondo , T. Ishizumi , T. Takeoka , S. Yamamoto , T. Hijikata . Highly reliable 150 mW CW operation of single-stripe AlGaAs lasers withwindow grown on facets. Jpn. J. Appl. Phys. , L904 - L906
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      • H. Jaeckel , G.-L. Bona , P. Buchmann , H.P. Meier , P. Vettiger , W.J. Kozlovsky , W. Lenth . Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm). IEEE J. Quantum Electron. , 6 , 1560 - 1567
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      • Yamaguchi, T., Yodoshi, K., Minakuchi, K., Inoue, Y., Komeda, K., Tabuchi, N., Bessho, Y., Mori, K., Niina, T.: `A fundamental transverse mode 100 mW semiconductor laser with high reliability', Proc. SPIE, 1990, Los Angeles, 1219, p. 126–133.
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      • T. Aoyagi , S. Hinata , K. Shigihara , Y. Seiwa , K. Ikeda , W. Susaki . High power operation of long-cavity phase-locked laser arrays. Electron. Lett. , 1396 - 1397
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