Low threshold ion-implanted Nd:YAG channel waveguide laser
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- Author(s): S.J. Field 1 ; D.C. Hanna 1 ; A.C. Large 1 ; D.P. Shepherd 1 ; A.C. Tropper 1 ; P.J. Chandler 2 ; P.D. Townsend 2 ; L. Zhang 2
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View affiliations
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Affiliations:
1:
Department of Physics and Optoelectronics Research Centre,
University of Southampton
, Southampton
, UK
2: School of Mathematical & Physical Sciences, University of Sussex , Brighton , UK
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Affiliations:
1:
Department of Physics and Optoelectronics Research Centre,
University of Southampton
, Southampton
, UK
- Source: Electronics Letters, Volume 27, Issue 25, 5 December 1991, p. 2375 – 2376, DOI: 10.1049/el:19911470, Print ISSN 0013-5194, Online ISSN 1350-911X
Abstract
The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500 μW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated.
Inspec keywords: integrated optics; optical waveguides; neodymium; ion implantation; solid lasers; yttrium compounds
Other keywords: YAG:Nd; 500 muW; 29 percent; diode pumping; ion-implanted; low threshold type; YAl5O12:Nd; channel waveguide laser; output slope efficiencies; threshold reduction; absorbed power thresholds
Subjects: Lasing action in other solids; Design of specific laser systems; Solid lasers; Optical waveguides and couplers; Integrated optics; Integrated optics; Optical waveguides
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