High-efficiency Ku-band HBT amplifier with 1 W CW output power

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High-efficiency Ku-band HBT amplifier with 1 W CW output power

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© The Institution of Electrical Engineers
Published

A compact, high-voltage AlGaAs/GaAs HBT was developed for applications in the Ku band using carbon-doped base structures. A single unit-cell device, operating under common-emitter mode and 10 V collector bias, produced 1.0 W CW output power at 15 GHz with 5.0 dB gain and 42% power-added efficiency. The power density of the device was a record 5.6 W/mm of emitter length.

Inspec keywords: heterojunction bipolar transistors; solid-state microwave devices; III-V semiconductors; aluminium compounds; power amplifiers; solid-state microwave circuits; gallium arsenide; microwave amplifiers

Other keywords: 5 dB; single unit-cell device; semiconductors; 15 GHz; output power; 10 V; 42 percent; Ku band; common-emitter mode; power density; SHF; collector bias; 1 W; power-added efficiency

Subjects: Solid-state microwave circuits and devices; Amplifiers; Bipolar transistors

References

    1. 1)
      • N.L. Wang , N.H. Sheng , M.F. Chang , W.J. Ho , G.J. Sullivan , E.A. Sovero , J.A. Higgins , P.M. Asbeck . Ultrahigh power efficiency operation of common-emitter and common-base HBTs at 10GHz. IEEE Trans. , 1381 - 1390
    2. 2)
      • Wang, N.L., Sheng, N.H., Ho, W.J., Chang, M.F., Sullivan, G.J., Higgins, J.A., Asbeck, P.M.: `18GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT', IEEE MTT-S Int. Microwave Symp. Dig., 1990, p. 997–1000.
    3. 3)
      • Bayraktaroglu, B., Khatibzadeh, M.A., Hudgens, R.D.: `Monolithic X-band heterojunction bipolar transistor power amplifiers', GaAs IC Symp. Dig., 1989, p. 271–274.
    4. 4)
      • Bayrakatroglu, B., Camilleri, N., Shih, H.D., Tserng, H.Q.: `AlGAAs/GaAs heterojunction bipolar transistor with 4 W/mm power density at X-band', IEEE MTT-S Int. Microwave Symp. Dig., 1987, p. 969.
    5. 5)
      • Bayraktaroglu, B., Khatibzadeh, M.A., Hudgens, R.D.: `5W monolithic HBT power amplifier for broadband X-band applications', IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1990, p. 43–46.
    6. 6)
      • Khatibzadeh, M.A., Bayraktaroglu, B.: `High-efficiency, class-B, S-band power amplifier', IEEE MTT-S Int. Microwave Symp. Dig., 1990, p. 993–996.
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