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Complementary vertical bipolar transistor process using high-energy ion implantation

Complementary vertical bipolar transistor process using high-energy ion implantation

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© The Institution of Electrical Engineers
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High-energy ion implantation is used as a key processing step in the formation of a complementary bipolar process with both transistor types being vertical. Both npn and pnp transistors are made vertically with a deep implanted collector region. Combinations of epitaxial and buried layers are avoided. Both transistors have an ideal Gummel plot with a current gain of about 60. Cutoff frequencies of over 1 GHz have been measured, which is much higher than for conventional lateral pnp transistors.

Inspec keywords: bipolar integrated circuits; integrated circuit technology; ion implantation

Other keywords: 1 GHz; deep implanted collector region; ideal Gummel plot; vertical bipolar transistor; high-energy ion implantation; complementary bipolar process

Subjects: Semiconductor doping; Bipolar integrated circuits

References

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