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Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

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© The Institution of Electrical Engineers
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A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6dB extinction ratio is demonstrated.

Inspec keywords: distributed feedback lasers; gallium compounds; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; optical communication equipment; optical modulation; semiconductor junction lasers; integrated optics; optical waveguides; gallium arsenide; III-V semiconductors; optical workshop techniques; indium compounds; diffraction gratings

Other keywords: MQW structures; semiconductor lasers; DFB-laser; InGaAs-InGaAsP; selective area MOCVD growth; integrated device; electroabsorption modulator

Subjects: Epitaxial growth; Laser beam modulation, pulsing and switching; mode locking and tuning; Optical waveguides; Optical waveguides and couplers; Semiconductor lasers; Integrated optics; Optical fabrication, surface grinding; Gratings, echelles; Lasing action in semiconductors; Integrated optics; Design of specific laser systems; Optical communication; Optical communication devices, equipment and systems; Chemical vapour deposition

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      • S. Yamamoto , M. Kuwazuru , H. Wakabayashi , Y. Iwamoto . Analysis of chirp power penalty in l.55-μm DFB-LD high-speed optical fiber transmission systems. J. Lightwave Technol. , 1518 - 1524
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