Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistors

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Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistors

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© The Institution of Electrical Engineers
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The relative importance of the base bulk recombination current and the base-emitter junction space charge recombination current is examined for AlGaAs/GaAs HBTs with different grading schemes in the base-emitter junction. Experimental results demonstrate that, in abrupt HBTs, the base bulk recombination current is larger, and the base current increases with the base-emitter bias with an ideality factor of ∼1. In contrast, in graded HBTs, the space charge recombination current dominates and the base current ideality factor is ∼2. These experimental results agree well with a published theoretical calculation.

Inspec keywords: aluminium compounds; heterojunction bipolar transistors; space charge; gallium arsenide; electron-hole recombination; III-V semiconductors

Other keywords: space charge recombination current; heterojunction bipolar transistors; base-emitter junction; base recombination currents; graded HBTs; abrupt HBTs

Subjects: Bipolar transistors

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