Analytical expressions for subthreshold charges and currents in thin-film SOI MOSFETs

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© The Institution of Electrical Engineers
Published 22/07/2012

Abstract

Analytical expressions for the front and back channel charges and currents in thin-film SOI MOSFETs operating in the subthreshold region are presented, based on a charge sheet model. The analysis includes the charge coupling between the front and back gates and the effect of interface states.

Inspec keywords: insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors

Other keywords: charge sheet model; modelling; Si; thin-film SOI MOSFETs; effect of interface states; subthreshold operation; subthreshold region; back channel charges; analytical expressions; subthreshold currents; front channel charges; charge coupling; subthreshold charges; Si-SiO2

Subjects: Insulated gate field effect transistors; Metal-insulator-semiconductor structures; Semiconductor device modelling, equivalent circuits, design and testing

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      • Mallikarjun, C., Bhat, K.N.: `Numerical and charge sheet models for thin-film SOI MOSFETs', IEEE Trans., 1990, p. 2039-2051
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