CW operation of semiconductor ring lasers
CW operation of semiconductor ring lasers
- Author(s): T. Krauss ; P.J.R. Laybourn ; J. Roberts
- DOI: 10.1049/el:19901349
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- Author(s): T. Krauss 1 ; P.J.R. Laybourn 1 ; J. Roberts 2
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View affiliations
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Affiliations:
1: Optoelectronics Research Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK
2: Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield, UK
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Affiliations:
1: Optoelectronics Research Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK
- Source:
Volume 26, Issue 25,
6 December 1990,
p.
2095 – 2097
DOI: 10.1049/el:19901349 , Print ISSN 0013-5194, Online ISSN 1350-911X
Semiconductor ring lasers have been fabricated in single quantum well material using electron-beam lithography and SiCl4 dry etching. CW operation has been achieved in 84 μm diameter rings at a threshold current of 24 mA. This low value makes the structure very suitable for monolithic integration in optoelectronic circuits.
Inspec keywords: integrated optoelectronics; ring lasers; sputter etching; semiconductor junction lasers
Other keywords:
Subjects: Laser resonators and cavities; Integrated optoelectronics; Design of specific laser systems; Laser resonators and cavities; Lasing action in semiconductors; Surface treatment (semiconductor technology); Semiconductor lasers
References
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