%0 Electronic Article %A G.J. Parker %A C.M.K. Starbuck %K semiconductors %K 0.7 micron %K SiH4 gas %K uniformity %K selectivity %K Si %K selective epitaxial growth %K LPCVD %X Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 μn thickness showing excellent uniformity and selectivity without the use of HCl are presented. %@ 0013-5194 %T Selective silicon epitaxial growth by LPCVD using silane %B Electronics Letters %D June 1990 %V 26 %N 13 %P 831-832 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=45jfrdm6vb7oj.x-iet-live-01content/journals/10.1049/el_19900545 %G EN