Selective silicon epitaxial growth by LPCVD using silane

Selective silicon epitaxial growth by LPCVD using silane

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 μn thickness showing excellent uniformity and selectivity without the use of HCl are presented.


    1. 1)
      • Selective low-pressure silicon epitaxy for MOS and bipolar transistor application
    2. 2)
      • Selective epitaxial growth for the fabrication of CMOS integrated circuits
    3. 3)
      • Epitaxial deposition of silicon in deep grooves
    4. 4)
      • Selective silicon epitaxy using reduced pressure technique
    5. 5)
      • Control of lateral epitaxial chemical vapour deposition of silicon over insulators
    6. 6)
      • Lateral epitaxial overgrowth of silicon on SiO2
    7. 7)
      • Selective growth of epitaxial silicon and gallium arsenide
    8. 8)
      • Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2
    9. 9)
      • Low-temperature silicon selective deposition of silane under ultraclean environment
    10. 10)
      • Facet formation in selective silicon epitaxial growth

Related content

This is a required field
Please enter a valid email address