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Selective silicon epitaxial growth by LPCVD using silane

Selective silicon epitaxial growth by LPCVD using silane

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Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 μn thickness showing excellent uniformity and selectivity without the use of HCl are presented.

References

    1. 1)
      • H. Kurten , H.-J. Voss , W. Kim , W.L. Engl . Selective low-pressure silicon epitaxy for MOS and bipolar transistor application. IEEE Trans. , 1511 - 1515
    2. 2)
      • A.C. Ipri , L. Jastzebski , J.F. Corboy , R. Metzl . Selective epitaxial growth for the fabrication of CMOS integrated circuits. IEEE Trans. , 1741 - 1747
    3. 3)
      • R.K. Smektzer . Epitaxial deposition of silicon in deep grooves. J. Electrochem. Soc. , 1666 - 1671
    4. 4)
      • K. Tanno , N. Endo , H. Kitajima , Y. Kurogi , H. Tsuya . Selective silicon epitaxy using reduced pressure technique. Jpn. J. Appl. Phys. , L564 - L566
    5. 5)
      • D.R. Bradbury , T.I. Kamins , C.-W. Tsao . Control of lateral epitaxial chemical vapour deposition of silicon over insulators. J. Appl. Phys. , 519 - 523
    6. 6)
      • D.D. Rathman , D.J. Silversmith , J.A. Burns . Lateral epitaxial overgrowth of silicon on SiO2. J. Electrochem. Soc. , 2303 - 2306
    7. 7)
      • P. Rai-Choudhury , D.K. Schroder . Selective growth of epitaxial silicon and gallium arsenide. J. Electrochem. Soc. , 107 - 110
    8. 8)
      • T.R. Yew , R. Reif . Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2. J. Appl. Phys. , 2500 - 2507
    9. 9)
      • J. Murota , N. Nakamura , M. Kato , N. Mikoshiba , T. Ohmi . Low-temperature silicon selective deposition of silane under ultraclean environment. Appl. Phys. Lett. , 1107 - 1109
    10. 10)
      • A. Ishitani , H. Kitajima , N. Endo , N. Kasai . Facet formation in selective silicon epitaxial growth. Jpn. J. Appl. Phys. , 1267 - 1269
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