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1.5μm band travelling-wave semiconductor optical amplifiers with window facet structure

1.5μm band travelling-wave semiconductor optical amplifiers with window facet structure

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© The Institution of Electrical Engineers
Published

1.5μ band travelling-wave semiconductor optical amplifiers (TWAs), characterised by their window facet structure and symmetrised active waveguide, have been developed. 1.5 dB spectral gain ripple and 1.3 dB TE-TM mode gain difference at 22 dB signal gain were achieved simultaneously. An average facet reflectivity as low as 0.06% was estimated.

Inspec keywords: optical communication equipment; semiconductor junction lasers; optical waveguide components

Other keywords: 1.5 micron; window facet structure; TE-TM mode gain difference; travelling-wave semiconductor optical amplifiers; symmetrised active waveguide; spectral gain ripple; 22 dB; signal gain; average facet reflectivity

Subjects: Optical waveguides; Semiconductor lasers; Optical communication

References

    1. 1)
      • Yamaguchi, M., Takano, S., Fujita, S., Numai, T., Mito, I., Kobayasshi, K.: `High-efficiency and high-speed operation in 1.55 μm λ/4-shifted DFB-DC-PBH LD with a new window structure', Paper THK4, Tech. dig., Optical fiber commun. conf., 1988, New Orleans, LA.
    2. 2)
      • I. Cha , M. Kitamura , I. Mito . 1.5 μm band travelling-wave semiconductor optical amplifiers with window facet structure. Electron. Lett. , 242 - 243
    3. 3)
      • K. Utaka , S. Akiba , K. Sakai , Y. Matsushima . Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 μm range. IEEE J. Quantum Electron. , 236 - 245
    4. 4)
      • M.J. O'mahoney . Semiconductor laser optical amplifiers for use in future fibre systems. J. Lightwave Technol. , 531 - 544
    5. 5)
      • E.A.J. Marcatili . Dielectric rectangular waveguide and directional coupler for integratedoptics. Bell Syst. Tech. J. , 2071 - 2102
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