Gain ripple minimisation and higher-order modes in semiconductor optical amplifiers

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Gain ripple minimisation and higher-order modes in semiconductor optical amplifiers

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© The Institution of Electrical Engineers
Published

Theoretical results are presented about the gain ripple performance of various structures proposed to obtain true travelling-wave operation in optical semiconductor laser amplifiers. Higher-order transverse modes are shown to limit the efficiency of antireflection mechanisms, especially in the case of misaligned stripes.

Inspec keywords: optical communication equipment; semiconductor junction lasers

Other keywords: gain ripple minimisation; efficiency of antireflection mechanisms; travelling-wave operation; optical communication; higher-order modes; limit to efficiency; semiconductor laser amplifiers; misaligned stripes; semiconductor optical amplifiers; gain ripple performance

Subjects: Optical communication; Semiconductor lasers

References

    1. 1)
      • C. Vassallo . Polarisation-independent antireflection coatings for semiconductor opticalamplifiers. Electron. Lett. , 61 - 62
    2. 2)
      • Collar, A.J., Henshall, G.D., Moule, D.J., Mikkelsen, E., Zheng, W., Stubkjaer, K.E.: `Fabrication and performance of λ = 1.5μm angled facet laser amplifiers', Semiconductor Laser Conference, 1988, Boston.
    3. 3)
      • C.E. Zah , C. Caneau , F.K. Shokoohi , S.G. Menocal , F. Favire , L.A. Reith , T.P. Lee . 1.3μm GaInAs near travelling wave laser amplifiers made by combination of angled facets and antireflection coatings. Electron. Lett. , 1275 - 1276
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890533
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