The bandgap of Ga0.5In0.5P grown by metalorganic vapourphase epitaxy increases as the substrate is inclined away from the (100) plane and saturates at high angles. The same phenomenon also exists in the quaternary (Al0.6Ga0.4)0.5In0.5P.
Inspec keywords: luminescence of inorganic solids; photoluminescence; gallium compounds; band structure of crystalline semiconductors and insulators; aluminium compounds; III-V semiconductors; indium compounds; vapour phase epitaxial growth; semiconductor growth
Other keywords:
Subjects: Thin film growth, structure, and epitaxy; Photoluminescence in tetrahedrally bonded nonmetals; Ion plating and other vapour deposition; Luminescent materials; II-VI and III-V semiconductors; Epitaxial growth; Electronic structure of crystalline semiconductor compounds and insulators
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