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Raman characterisation of stress in recrystallised silicon-on-insulator

Raman characterisation of stress in recrystallised silicon-on-insulator

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© The Institution of Electrical Engineers
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Raman scattering measurements were carried out to characterise Si films deposited on SiO2-coated Si substrates and recrystallised by a graphite strip heater or Ar+ ion laser. The frequency downshifts of the Raman peaks demonstrate that the Si films are under tensile stress. The crystallinity of the recrystallised films is also discussed.

Inspec keywords: spectral line shift; elemental semiconductors; Raman spectra of inorganic solids; stress effects; silicon; semiconductor-insulator boundaries; recrystallisation; semiconductor thin films

Other keywords: Si-SiO2; recrystallised films; frequency downshifts; Raman peaks; crystallinity; Ar+ ion laser; Raman scattering measurements; elemental semiconductors; tensile stress; graphite strip heater

Subjects: Solid-solid interfaces; Elemental semiconductors; Physical properties of thin films, nonelectronic; Infrared and Raman spectra in inorganic crystals; Metal-insulator-semiconductor structures; Optical properties of nonmetallic thin films

References

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