@ARTICLE{ iet:/content/journals/10.1049/el_19880862, author = {H. Hazama}, author = {M. Yoshimi}, author = {M. Takahashi}, author = {S. Kambayashi}, author = {H. Tango}, keywords = {SOI-MOSFETs;ultrathin SOI substrate;floating substrate effect;excess holes;gate turn-on pulses;drain-current overshoot;quick decay;500 A;}, ISSN = {0013-5194}, language = {English}, abstract = {An n-channel SOI-MOSFET fabricated on a very thin (500 Å) SOI substrate exhibited no detectable drain-current overshoot for various gate turn-on pulses. The reason can be ascribed to the suppression of the floating substrate effect, brought about by the quick decay of excess holes.}, title = {Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate}, journal = {Electronics Letters}, issue = {20}, volume = {24}, year = {1988}, month = {September}, pages = {1266-1267(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Electrical Engineers}, url = {https://digital-library.theiet.org/;jsessionid=1kslllw9ftyo5.x-iet-live-01content/journals/10.1049/el_19880862} }