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Intrinsic limitation of transconductance in extremely short silicon MOS transistors

Intrinsic limitation of transconductance in extremely short silicon MOS transistors

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© The Institution of Electrical Engineers
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An analysis of the limitation of transconductance by nonstationary transport in extremely short silicon MOS transistors is presented. It is shown using a dynamic Boltzmann transport approach that the transconductance should saturate when reducing the device length to some fraction of the mean free path. In silicon, this limit is found to range around 0.03 – 0.04μm for devices operating at 77 K.

Inspec keywords: silicon; insulated gate field effect transistors; semiconductor device models; elemental semiconductors

Other keywords: fraction of mean free path; analysis; 0.03 to 0.04 micron; short channel MOSFETs; 77 K; dynamic Boltzmann transport approach; scaling limit; intrinsic limitation of transconductance; extremely short Si MOS transistors; transconductance saturation; Si; modelling; nonstationary transport

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Insulated gate field effect transistors; Elemental semiconductors

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      • Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Ganin, E., Ng, H.Y., Zicherman, D.S., Moy, D., Chang, T.H.P., Dennard, R.H.: `Experimental technology and characterisation of self aligned 0.1 μm gate length low temperature operation NMOS devices', Technical digest of IEEE IEDM, 1987, p. 397–400.
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