Intrinsic limitation of transconductance in extremely short silicon MOS transistors
An analysis of the limitation of transconductance by nonstationary transport in extremely short silicon MOS transistors is presented. It is shown using a dynamic Boltzmann transport approach that the transconductance should saturate when reducing the device length to some fraction of the mean free path. In silicon, this limit is found to range around 0.03 – 0.04μm for devices operating at 77 K.