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First SiC dynistor

First SiC dynistor

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A four-layer dynistor has been made from SiC for the first time. Switching voltage is in the range from 30–50 V and switching time is about 10−8 s. The structure has been fabricated with a modified liquid-phase epitaxy (LPE).

References

    1. 1)
      • Pettenpaul, E., Münch, W.V., Ziegler, G.: `Silicon carbide devices', Proceedings of the 9th European Solid State Device Research Conference, 1980, Bristol, London, p. 21–35
    2. 2)
      • , Silicon carbide—a high temperature semiconductor
    3. 3)
      • Silicon carbide junction devices, Semiconductors and semimetals
    4. 4)
      • Silicon carbide bipolar transistor on SiC
    5. 5)
      • , Induction method of holding liquid metals in a suspended state
    6. 6)
      • Silicon carbide p-n structures grown by liquid-phase epitaxy
    7. 7)
      • High temperature SiC-6H JFET
    8. 8)
      • SiC-6H blue LED's
    9. 9)
      • SiC-structure growth from the liquid phase in a suspended state, Abstracts of papers at 7th conference on the processes of growth and synthesis of semiconductor crystals and films
    10. 10)
      • Reactive inoplasmik etching of silicon carbide
    11. 11)
      • Comparative study of the turn-on of gallium arsenide and silicon thyristors
    12. 12)
      • , Thyristoren
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