Field-effect transistor with diphthalocyanine thin film
Field-effect transistor with diphthalocyanine thin film
- Author(s): C. Clarisse ; M.T. Riou ; M. Gauneau ; M. le Contellec
- DOI: 10.1049/el:19880456
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- Author(s): C. Clarisse 1 ; M.T. Riou 1 ; M. Gauneau 1 ; M. le Contellec 1
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View affiliations
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Affiliations:
1: LAB-OCM/T1C, Centre National d'Etudes des Télécommunications, Lannion, France
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Affiliations:
1: LAB-OCM/T1C, Centre National d'Etudes des Télécommunications, Lannion, France
- Source:
Volume 24, Issue 11,
26 May 1988,
p.
674 – 675
DOI: 10.1049/el:19880456 , Print ISSN 0013-5194, Online ISSN 1350-911X
A field effect transistor has been fabricated with organic semiconductors: scandium diphthalocyanine and nickel phthalocyanine. The electrical characteristics are studied in air atmosphere. The influence of the diphthalocyanine film thickness has been detected.
Inspec keywords: organic semiconductors; nickel compounds; thin film transistors; scandium compounds; field effect transistors
Other keywords:
Subjects: Other semiconductor materials; Insulated gate field effect transistors
References
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