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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

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© The Institution of Electrical Engineers
Published

The letter reports short wavelength emission (7205 Å) from MBE AlGaAs GRINSCH single Quantum well lasers. Visible emission is obtained with a 60 Å AlGaAs well containing ⋍ 18% aluminium and both design optimisation and growth conditions lead to low-threshold operation. Broad area Fabry-Perot diodes have threshold current densities as low as 390 A/cm2 and 670 A/cm2 for cavity lengths of 500 µm and 250 µm, respectively.

Inspec keywords: gradient index optics; semiconductor growth; semiconductor junction lasers; III-V semiconductors; aluminium compounds; molecular beam epitaxial growth; gallium arsenide

Other keywords: Fabry-Perot diodes; low threshold current density; growth conditions; AlGaAs; 7205 Å; semiconductor laser; molecular beam epitaxy; GRINSCH single quantum well lasers; cavity lengths; short wavelength emission; visible lasers; 250 micron; 500 micron; design optimisation

Subjects: Lasing action in semiconductors; Semiconductor lasers; Epitaxial growth; Vacuum deposition; Design of specific laser systems

References

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      • Saint-Cricq, B.: `Diodes laser á puits quantique: modèlisation physique et réalisation par èpitaxie par jets molèculaires de dispositifs GaAs/GaAlAs', Thése de Doctorat d'Etat, no.1305, 1987, Toulouse, France, UPS.
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      • T. Saku , H. Iwamura , Y. Hirayama , Y. Suzuki , H. Okamoto . Room temperature operation of 650nm AlGaAs multi-quantumwell lasers diode grown by molecular beam epitaxy. Jpn. J. Appl. Phys. , L73 - L75
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      • Saint-Cricq, B., Chatenoud, F., Fabre, N., Lozes-Dupuy, F., Vassilieff, G.: `GaAlAs MBE quantum well laser with low threshold current—Modelling and experiment', Proceedings of the International Symposium on the Technologies for Optoelectronics, 16–20 November 1987, Cannes.
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      • T. Hayakawa , T. Suyama , M. Kondo , K. Takahashi , S. Yamamoto , T. Hijikata . Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer. Appl. Phys. Lett. , 191 - 193
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      • T.J. Drummond , J. Klem , D. Arnold , R. Fischer , R.E. Thorne , W.G. Lyons , H. Morkoc . Use of a superlattice to enhance the interface properties between two bulk heterolayers. Appl. Phys. Lett. , 615 - 617
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      • P.L. Derry , A. Yariv , K. Lau , N. Bar-Chaim , K. Lee , J. Rosenberg . Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al, Ga)As lasers with high reflectivity coatings. Appl. Phys. Lett. , 1773 - 1775
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      • H.Z. Chen , A. Ghaffari , H. Morkoç , A. Yariv . Very low threshold current densities (under 100 A/cm2) in AlGaAs/GaAs single-quantum-well GRINSCH lasers grown by molecular beam epitaxy. Electron. Lett. , 1334 - 1335
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19880364
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