Gate coupling and floating-body effects in thin-film SOI MOSFETs

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Gate coupling and floating-body effects in thin-film SOI MOSFETs

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© The Institution of Electrical Engineers
Published

Thin-film, silicon-on-insulator (SOI) MOSFETs exhibit bias-dependent suppression of the kink effect. For zero or positive back gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back gate bias. For sufficiently negative back gate bias (as might be required for total-dose radiation-hard applications), the kink effect reemerges and the threshold voltage depends instead on the applied drain voltage.

Inspec keywords: insulated gate field effect transistors; radiation hardening (electronics); radiation effects; thin film transistors

Other keywords: TFT; Si; threshold voltage; applied drain voltage; total-dose radiation-hard applications; floating-body effects; radiation effects; thin-film SOI MOSFETs; kink effect; back gate bias; SIMOX; bias-dependent suppression

Subjects: Insulated gate field effect transistors

References

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      • During the preparation of this manuscript, the authors became aware of similar work by J.-P. Colinge and B.-Y. Mao, presented at the October 1987 IEEE SOS/SOI workshop in Durango, CO.
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      • G.K. Celler . Silicon-on-insulator films by oxygen implantation and lamp annealing. Solid-State Technol. , 93 - 98
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      • J.P. Colinge . Reduction of floating substrate effect in thin-film SOI MOSFETs. Electron. Lett. , 187 - 188
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      • H.K. Lim , J.G. Fossum . Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFETs. IEEE Trans. , 1244 - 1251
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      • B.-Y. Tsaur , R.W. Mountain , C.K. Chen , G.W. Turner , J.C.C. Fan . Effects of ionizing radiation on SOI/CMOS devices fabricated in zone-melt-recrystallized Si films on SiO2. IEEE Electron Dev. Lett. , 238 - 240
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