Performance of optical receivers incorporating multiemission superlattice avalanche photodiodes

Access Full Text

Performance of optical receivers incorporating multiemission superlattice avalanche photodiodes

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Recently interest has been expressed in superlattice avalanche photodiodes (SAPDs) in which the initiating carrier can impact more than one ionisation per stage, as a further step towards the solid-state photomultiplier. This letter indicates that these advanced SAPDs are likely to offer improved receiver sensitivity, compared with normal SAPDs, only if the residual hole ionisation is kept to an extremely low value.

Inspec keywords: receivers; optical communication equipment; avalanche photodiodes; semiconductor superlattices

Other keywords: solid-state photomultiplier; residual hole ionisation; semiconductor superlattice; optical communication equipment; optical receivers; multiemission type; avalanche photodiodes

Subjects: Photoelectric devices; Optical communication

References

    1. 1)
      • M.C. Teich , K. Matsuo , B.E. Saleh . Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes. IEEE J. Quantum Electron. , 1184 - 1193
    2. 2)
      • F. Capasso . Multilayer avalanche photodiodes and solid-state photomultipliers. Laser Focus/Electro-Optics , 84 - 101
    3. 3)
      • Fyath, R.S., O'Reilly, J.J.: `Multilayer APDs producing up to two impact ionizations per carrier per stage', 87/03, Research Report, .
    4. 4)
      • K.F. Brennan , C.J. Summers . The variably spaced superlattice energy filter quantum well avalanche photodiode: a solidstate photomultiplier. IEEE J. Quantum Electron. , 320 - 327
    5. 5)
      • S.D. Personick , P. Balaban , J.H. Bobsin , P.R. Kumar . A detailed comparison of four approaches to the calculation of the sensitivity of optical fiber system receivers. IEEE Trans. , 541 - 548
    6. 6)
      • F. Capasso , R.K. Willardson , A.C. Beers . (1985) Physics of avalanche photodiodes, Semiconductors and semimetals.
    7. 7)
      • K.F. Brennan . Optimization and modeling of avalanche photodiode structures: application to a new class of superlattice photodetectors, the p-i-n, p-n homojunction, p-n heterojunction APD's. IEEE Trans. , 1658 - 1669
    8. 8)
      • R.G. Smith , S.D. Personick , H. Kressel . (1980) Receiver design for optical fiber communication systems, Semiconductor devices for optical communication.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19880157
Loading

Related content

content/journals/10.1049/el_19880157
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading