High mobility two-dimensional electron gas in InP/Ga0.47In0.53As heterojunctions grown by low-pressure organometallic vapour phase epitaxy

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High mobility two-dimensional electron gas in InP/Ga0.47In0.53As heterojunctions grown by low-pressure organometallic vapour phase epitaxy

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© The Institution of Electrical Engineers
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The two-dimensional electron gas in InP/GaInAs heterojunctions, grown by LP-OMVPE, showed Hall mobilities as high as 164 000 and 103 000 cm2/Vs at 4 K and 80 K, respectively. A maximum Hall mobility of 172 000 cm2/Vs was measured at 20 K. Shubnikov-de Haas oscillations measured at 200 mK in magnetic fields up to 20 T indicated the total absence of parallel conduction. By illuminating the sample it was possible to populate the second electrical sub-band at a total carrier density ns = 4.4 × 1011 cm−2.

Inspec keywords: semiconductor junctions; magnetoresistance; semiconductor epitaxial layers; indium compounds; semiconductor growth; III-V semiconductors; carrier mobility; electron gas; gallium arsenide; vapour phase epitaxial growth; Hall effect; carrier density

Other keywords: low pressure MOVPE; carrier density; Shubnikov-de Haas oscillations; sample illumination; 4 to 80 K; III-V semiconductor; Hall mobilities; InP-Ga0.47In0.53As heterojunctions; magnetic fields; organometallic vapour phase epitaxy; two-dimensional electron gas; second electrical subband

Subjects: Thin film growth, structure, and epitaxy; Epitaxial growth; Chemical vapour deposition; Semiconductor junctions; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

References

    1. 1)
      • J.D. Oliver , L.F. Eastman , P.D. Kirchner , W.J. Schaff . Electrical characterization and alloy scattering measurements of LPE GaxIn1−xAs/Inp for high frequency device applications. J. Crystal Growth , 64 - 68
    2. 2)
      • M. Frei , D.C. Tsui , W.T. Tsang . Electronic properties of In0.53Ga0.47As-InP single quatum wells grown by chemical beam epitaxy. Appl. Phys. Lett. , 606 - 608
    3. 3)
      • W.T. Tsang , A.M. Chang , J.A. Ditzenberger . Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy. Appl. Phys. Lett. , 960 - 962
    4. 4)
      • E.P. Menu , D. Moroni , J.N. Patillon , T. Ngo , J.P. Andre . High mobility of two-dimensional electrons in Ga1−xInxAs/InP heterostructures grown at atmospheric pressure MOVPE. J. Crystal Growth , 920 - 927
    5. 5)
      • Y. Takeda , A. Sasaki . Calculated electron mobility in two-dimensional electrons in AlInAs/InGaAs and InP/InGaAs single heterostructures. Jpn. J. Appl. Phys. , 1307 - 1311
    6. 6)
      • G. Bastard . Energy levels and alloy scattering in InP-In(Ga)As heterojunctions. Appl. Phys. Lett. , 591 - 593
    7. 7)
      • K. Tsubaki , T. Fukui , H. Saito . High field electron transport in n-InP/GaInAs two-dimensional electron gas. Appl. Phys. Lett. , 875 - 877
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