In0.53Ga0.47As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration

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In0.53Ga0.47As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration

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© The Institution of Electrical Engineers
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A substrate-entry PIN photodiode has been constructed using In0.53Ga0.47As grown on a semi-insulating InP substrate by MOVPE. This device shows low dark current (200 pA) and low capacitance (95 fF), with large remote bondpads. This device is suitable for monolithic integration with electronic devices.

Inspec keywords: III-V semiconductors; semiconductor epitaxial layers; integrated optoelectronics; gallium arsenide; indium compounds; vapour phase epitaxial growth; photodiodes

Other keywords: InP; capacitance; monolithic integration; dark current; MOVPE; III-V semiconductors; In0.53Ga0.47As; remote bondpads; substrate-entry PIN photodiode

Subjects: Epitaxial growth; Integrated optoelectronics; II-VI and III-V semiconductors

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