MBE-grown AlGaAs/GaAs HBTs on InP substrate
MBE-grown AlGaAs/GaAs HBTs on InP substrate
- Author(s): H. Ito and T. Ishibashi
- DOI: 10.1049/el:19870288
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- Author(s): H. Ito 1 and T. Ishibashi 1
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View affiliations
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Affiliations:
1: NTT Electrical Communications Laboratories, Atsugi, Japan
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Affiliations:
1: NTT Electrical Communications Laboratories, Atsugi, Japan
- Source:
Volume 23, Issue 8,
9 April 1987,
p.
394 – 395
DOI: 10.1049/el:19870288 , Print ISSN 0013-5194, Online ISSN 1350-911X
AlGaAs/GaAs HBTs are fabricated on InP substrates for the first time. Preliminary results show a current gain of 5 at a collector current density of 2 × 104A/cm2 in spite of a dislocation density higher than 109/cm2.
Inspec keywords: gallium arsenide; aluminium compounds; bipolar transistors; III-V semiconductors; semiconductor growth; molecular beam epitaxial growth
Other keywords:
Subjects: Bipolar transistors; Epitaxial growth; II-VI and III-V semiconductors
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