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MBE-grown AlGaAs/GaAs HBTs on InP substrate

MBE-grown AlGaAs/GaAs HBTs on InP substrate

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AlGaAs/GaAs HBTs are fabricated on InP substrates for the first time. Preliminary results show a current gain of 5 at a collector current density of 2 × 104A/cm2 in spite of a dislocation density higher than 109/cm2.

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