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1887

Low-threshold, high-power zero-order lateral-mode DQW-SCH metal-clad ridge waveguide (AlGa)As/GaAs lasers

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Abstract

Metal-clad ridge waveguide (MCRW), double quantum well, separately confined heterostrucuture (DQW-SCH) lasers have been fabricated having continuous-wave (CW) threshold currents of 10–12 mA and external differential quantum efficiencies of 41–46% per uncoated facet. Light/current characteristics are linear to >70 mW, and zero-order lateral mode operation was measured at 56 mW. The CW burn-off power density is nearly double the best previously reported value.

References

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      • O. Wada , T. Sanada , M. Kuno , T. Fujii . Very low threshold current ridge-waveguide AlGaAs/GaAs single quantum well lasers. Electron. Lett. , 1025 - 1026
    2. 2)
      • C. Harder , P. Buchmann , H. Meier . High-power ridge-waveguide AlGaAs GRIN-SCH laser diode. Electron. Lett. , 1081 - 1082
    3. 3)
      • Garrett, B., Glew, R.W., Thrush, E.J., Whiteaway, J.E.A.: `Design, fabrication and characterisation of (AlGa)As/GaAs MQW SCH lasers', IEE Digest No. 1986/128, IEE Colloquium on Multiquantum Well Devices—Physics, Engineering and Applications, 8 December 1986, London, IEE, to be published fully elsewhere.
    4. 4)
      • R.W. Glew , B. Garrett , J.E.A. Whiteaway , E.J. Thrush . GaAs/(GaAl)As LOC lasers grown by MOCVD. J. Cryst. Growth , 613 - 620

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content/journals/10.1049/el_19870272
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