Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.
Inspec keywords: solid-state microwave devices; rectification; semiconductor device testing; power transistors; life testing; electromigration; reliability; ohmic contacts; Schottky gate field effect transistors
Other keywords:
Subjects: Maintenance and reliability; Solid-state microwave circuits and devices; Testing; Reliability; Other field effect devices; Semiconductor-metal interfaces
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