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Gain saturation dependence on signal wavelength in a travelling-wave semiconductor laser amplifier

Gain saturation dependence on signal wavelength in a travelling-wave semiconductor laser amplifier

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© The Institution of Electrical Engineers
Published

Gain saturation dependence on signal wavelength in a 1.5 μm InGaAsP travelling-wave semiconductor laser amplifier is experimentally studied. Saturation output powers were 6.9dBm, 8.3dBm and 10.6dBm for signal wavelengths of 1490 nm, 1510 nm and 1540 nm, respectively. This saturation dependence on wavelength, i.e. higher saturation output power for longer signal wavelength, results from signal gain peak shift towards longer wavelength with increasing input power.

Inspec keywords: gallium arsenide; III-V semiconductors; semiconductor junction lasers; indium compounds

Other keywords: InGaAsP; travelling-wave semiconductor laser amplifier; signal gain peak shift; gain saturation; 1490 nm; laser TWA; 1510 nm; saturation output power; saturation dependence on signal wavelength; 1540 nm

Subjects: Lasing action in semiconductors; Semiconductor lasers; II-VI and III-V semiconductors; Design of specific laser systems

References

    1. 1)
      • I.D. Henning , M.J. Adams , J.V. Collins . Performance predictions from a new optical amplifier model. IEEE J. Quantum Electron. , 609 - 613
    2. 2)
      • M.J. O'Mahony , I.W. Marshall , H.J. Westlake , W.G. Stallard . Wideband 1.5μm optical receiver using travelling-wave laser amplifier. Electron. Lett. , 1238 - 1240
    3. 3)
      • Saitoh, T., Mukai, T.: `Low-noise 1.5 μm GaInAsP travellingwave optical amplifier with high-saturation output power', PD-5, 10th IEEE international semiconductor laser conf., 1986, Kanazawa, Japan.
    4. 4)
      • Eisenstein, G., Hall, K.L., Jopson, R.M., Raybon, G., Whalen, M.S.: `Two-color gain saturation in an InGaAsP near-travelingwave optical amplifier', ThC4, OFC/IOOC'87, 1987.
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