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Self-aligned GaAs gate heterojunction SISFET

Self-aligned GaAs gate heterojunction SISFET

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© The Institution of Electrical Engineers
Published

A self-aligned GaAs gate heterojunction enhancement-mode SISFET with a layer structure of n+-GaAs/undoped Al0.5Ga0.5As/undoped GaAs is fabricated and shows a high transconductance and a low threshold voltage. The highest transconductance at both room temperature and at 77 K ever reported on a long-channel GaAs gate SISFET, 197 mS/mm and 313 mS/mm, respectively, is obtained.

Inspec keywords: field effect transistors; semiconductor-insulator-semiconductor structures; p-n heterojunctions; aluminium compounds; gallium arsenide; III-V semiconductors

Other keywords: enhancement-mode; layer structure; 77 K; GaAs-AlGaAs-GaAs; GaAs gate; heterojunction SISFET; transconductance; room temperature; threshold voltage; self-aligned

Subjects: II-VI and III-V semiconductors; Other semiconductor interfaces and junctions; Other field effect devices

References

    1. 1)
      • M. Matsumoto , M. Ogura , T. Wada , N. Hashizume , T. Yao , Y. Hayashi . n+-GaAs/undoped GaAlAs/undoped GaAs fieldeffect transistor. Electron. Lett. , 462 - 463
    2. 2)
      • Maeza . IEEE Electron Device Lett.. IEEE Electron Device Lett. , 454 - 456
    3. 3)
      • P.M. Solomon , C.M. Knoedler , S.L. Wright . A GaAs gate heterojunction FET. IEEE Electron Device Lett.
    4. 4)
      • Y. Katayama . Jpn. J. Appl. Phys.. Jpn. J. Appl. Phys. , 150 - 152
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