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Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers

Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers

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© The Institution of Electrical Engineers
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The fabrication and performance of 1.3 μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers grown by MOVPE are reported. A modulation bandwidth above 8.3GHz has been achieved at room temperature without using a mesa-stripe geometry. CW output power up to 30 mW per facet at 20°C and CW operation up to 95°C have been obtained. The semi-insulating InP layer alone is proved to be an effective current blocking layer.

Inspec keywords: gallium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductors; indium compounds; vapour phase epitaxial growth

Other keywords: CW output power; modulation bandwidth above 8.3 GHz; CW operation; 95 degC; room temperature; 30 mW; MOVPE; semiinsulating InP; InGaAsP buried crescent lasers; InP:Fe current blocking layer; 1.3 micron; 8.3 GHz; semiconductors

Subjects: Chemical vapour deposition; II-VI and III-V semiconductors; Design of specific laser systems; Semiconductor lasers; Chemical vapour deposition; Lasing action in semiconductors

References

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      • H. Ishikawa , H. Imai , T. Tanahashi , K. Hori , K. Takahei . V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 μm wavelength. IEEE J. Quantum Electron. , 1704 - 1711
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      • R.S. Tucker , I.P. Kaminov . High-frequency characteristics of directly modulated InGaAsP ridge waveguideand buried heterostructure lasers. J. Lightwave Technol. , 385 - 393
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      • D.P. Wilt , J. Long , W.C. Dautremont-Smith , M.W. Focht , T.M. Shen , R.L. Hartman . Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth. Electron. Lett. , 869 - 870
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      • E. Oomura , H. Higuchi , Y. Sakakibara , R. Hirano , H. Namizaki , W. Susaki , K. Ikeda , K. Fujikawa . InGaAsP/InP buried crescent laser diode emitting at 1.3 μm wavelength. IEEE J. Quantum Electron. , 866 - 874
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19870038
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