8 Gbit/s return-to-zero modulation of a semiconductor laser by gain-switching
8 Gbit/s return-to-zero modulation of a semiconductor laser by gain-switching
- Author(s): R.S. Tucker ; J.M. Wiesenfeld ; A.H. Gnauck ; J.E. Bowers
- DOI: 10.1049/el:19860914
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- Author(s): R.S. Tucker 1 ; J.M. Wiesenfeld 1 ; A.H. Gnauck 1 ; J.E. Bowers 1
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View affiliations
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Affiliations:
1: Crawford Hill Laboratory, AT&T Bell Laboratories, Holmdel, USA
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Affiliations:
1: Crawford Hill Laboratory, AT&T Bell Laboratories, Holmdel, USA
- Source:
Volume 22, Issue 25,
4 December 1986,
p.
1329 – 1331
DOI: 10.1049/el:19860914 , Print ISSN 0013-5194, Online ISSN 1350-911X
We demonstrate 8 Gbit/s return-to-zero pulse modulation of an InGaAsP constricted mesa laser, using short pulses generated by gain-switching. Pattern effects are minimised by precise control of the bias current.
Inspec keywords: gallium arsenide; III-V semiconductors; semiconductor junction lasers; gallium compounds; indium compounds; optical modulation
Other keywords:
Subjects: Laser beam modulation, pulsing and switching; mode locking and tuning; Semiconductor lasers; Lasing action in semiconductors
References
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