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New type of dynamic frequency divider for microwave systems operation

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Abstract

A new type of dynamic frequency divider has been demonstrated successfully: a maximum dividing frequency of 8 GHz at room temperature was achieved. As a result of the new proposed design, a maximum toggle frequency of 30 GHz could be obtained after optimisation of various technological parameters. The design and the first experimental results are described and discussed.

References

    1. 1)
      • Pham, N.T.: `Porte logique a coincidence', no. 84-19194, 1984, French patent, Thomson reference number: 53988y.
    2. 2)
      • D. Delagebeaudeuf , M. Laviron , P. Delescluse , P.N. Pham , J. Chaplart , N.T. Linh . Planar enhancement mode two dimensional electron gas FET asociated with a low AlGaAs surface potential. Electron. Lett. , 103 - 104
    3. 3)
      • N.T. Pham , P. Delescluse , D. Delagebeaudeuf , M. Laviron , J. Chaplart , N.T. Linh . High-speed low-power DCFL using planar two-dimensional electron gas FET technology. Electron. Lett. , 517 - 518
    4. 4)
      • Takada, T., Shimazu, Y., Yamasaki, K.: `A 2 Gb/s throughput GaAs digital time switching LSI using LSCFL', IEEE MSC symposium, technical digest, 1985, p. 22–26.
    5. 5)
      • T. Enoki , K. Yamasaki , K. Osafune , K. Ohwada . Above 10 GHz frequency dividers with GaAs advanced SAINT and airbridge technology. Electron. Lett. , 68 - 69
    6. 6)
      • N.C. Cirillo , J.K. Abrokwah , A.M. Fraasch , P.J. Vold . Ultra-high speed ring oscillators based on self-aligned-gate modulation-doped n+ (Al, Ga)As/GaAs. Electron. Lett. , 772 - 773
    7. 7)
      • Lee, C.P., Hou, D., Lee, S.J., Miller, D.L., Anderson, R.J.: `Ultra-high speed digital integrated circuits using GaAs/AlGaAs high mobility transistors', IEEE GaAs IC symposium, technical digest, 1983, p. 162–165.
    8. 8)
      • Bell Labs builds 5.8 ps transistor. Electronics
    9. 9)
      • Chevrier, J., Pham, N.T.: ESPRIT 232, Final report, 1985.

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content/journals/10.1049/el_19860471
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